Tutorial slides are now available here

Four tutorials on very up-to-date topics have been scheduled at ESREF2010. The programme inculdes tutorials on Monday 11th:

Reliability and failure analysis of optoelectronics devices (Schedule: Monday 9.00 - 10.50)
(M. Meneghini, M. Vanzi, G. Meneghesso, and E. Zanoni)
Speaker: Matteo Meneghini, DEI, University of Padova, Italy

Abstract: With this tutorial we give an overview on the most common failure modes and mechanisms of optoelectronic devices, focusing on the case of LEDs and lasers. After a general introduction on the reliability of optoelectronic devices, we will give a description of selected (and recent) failure analysis and reliability studies carried out by our research groups.
Particular interest will be focused towards the description of: (i) the degradation of the active region of LEDs and lasers; (ii) the degradation of the package-phosphors system of white LEDs; (iii) the degradation of the facets of laser diodes; (iv) the degradation of ohmic contacts of high power LEDs and lasers; (v) ESD-related failures of advanced LED structures.
This presentation will provide a general understanding on the critical factors that limit the lifetime of optoelectronic devices, as well as on the analytical techniques that can be adopted for achieving the identification of the degradation mechanisms. Part of the presentation will be devoted to advanced device technologies such as visible LEDs (for lighting and automotive applications) and Blu-Ray laser diodes.

Reliability issues of photovoltaic devices and systems (Schedule: Monday 11.10 - 13.00)
(F. Roca and G. Graditi)
Speakers: Francesco Roca and Giorgio Graditi, ENEA Portici Technical Unit for Solar Energy applications, Italy

Abstract: Wafer-based crystalline silicon solar modules are stated as very  reliable elements. This presumable high reliability is reflected by their long power warranty periods typically in the range of 20 years or more. On other hand PV Systems include array structure, trackers, ac and dc wiring, overcurrent protection, disconnects, interconnects, inverters, charge controllers, energy storage and system controllers. Reliability issues for PV technology usually stem from someone of indicated components. The tutorial provides an overview on the PV technology reliability by focusing on the methodologies used for the analysis and validation of the experimental and performance results of PV systems operation. Furthermore, reliability issues and testing needs will also be presented for the new class of PV technologies are arising on the market (thin film, PV concentration and organic and hybrid approach) showing unforeseeable reliability performances.

Hot Carrier Degradation issues in advanced CMOS nodes (Schedule: Monday 14.30 - 16.20)
(A. Bravaix)
Speaker: Alain Bravaix, High Institute for Electronics and Numerics, France

Abstract: Since the 130nm CMOS node, Channel Hot-Carrier (CHC) degradation is coming back to the front scene due to new mechanisms which arise at low voltages. CHC degradation has now to be described through an energy mode framework instead of maximum electric field. The tutorial focuses on the evolution of CHC degradation in actual CMOS technologies between Input-Output (IO) and core devices, comparing N-channel and P-Channel MOSFETs. Attention has been paid to show that CHC and Negative Bias Temperature Instability (NBTI) are closely inter-linked. An energy dependent modeling is developed for DC to AC transfer which allows to accurately describe any digital waveforms and calculate the device lifetime and implications for elementary cells.

Reliability issues of current and emerging non-volatile memories (Schedule: Monday 16.40 - 18.30)
(A. S. Spinelli, C. Monzio Compagnoni, D. Ielmini)
Speaker: Alessandro Spinelli, DEI, Polytechnic University of Milano, Italy

Abstract: This tutorial will cover the operation principles and the main reliability constraints which affect the performance of current and emerging non-volatile memories, and is divided into three parts. In the first one, floating-gate devices are discussed, addressing key reliability issues such as SILC and charge detrapping, random telegraph noise and few-electron phenomena. In the second part, PCM technology and reliability are discussed as an emerging alternative for NVMs. In particular, the resistance change with time due to the metastable nature of the amorphous phase will be described, discussing the effect of crystallization and reversible/irreversible structure relaxation. Finally, the principle and reliability of nitride-based charge-trap devices are addressed, focusing in particular on the programming efficiency, the different charge-loss mechanisms and the role of the top dielectric and highlighting the need to move toward 3D structures.

For doubts or questions at any time, please, contact:

Francesco IANNUZZO

ESREF 2010 Technical Programme Committee co-chair
Università degli studi di Cassino
Via di Biasio, 43
I-03043 CASSINO (FR)
Phone: +39 0776 299.3741 - +39 0776 299.4937
e-mail: esref2010@unicas.it