Tutorial
slides are now available
here
Four
tutorials on very up-to-date
topics have been scheduled at
ESREF2010. The programme inculdes tutorials on Monday 11th:
Reliability and failure
analysis
of optoelectronics devices (Schedule: Monday 9.00 - 10.50)
(M. Meneghini, M. Vanzi, G. Meneghesso, and E. Zanoni)
Speaker: Matteo Meneghini, DEI,
University
of Padova, Italy
Abstract:
With this tutorial
we give an overview on the most common failure modes and mechanisms of
optoelectronic devices, focusing on the case of LEDs and lasers. After
a general introduction on the reliability of optoelectronic devices, we
will give a description of selected (and recent) failure analysis and
reliability studies carried out by our research groups.
Particular interest will be focused towards the description of: (i) the
degradation of the active region of LEDs and lasers; (ii) the
degradation of the package-phosphors system of white LEDs; (iii) the
degradation of the facets of laser diodes; (iv) the degradation of
ohmic contacts of high power LEDs and lasers; (v) ESD-related failures
of advanced LED structures.
This presentation will provide a general understanding on the critical
factors that limit the lifetime of optoelectronic devices, as well as
on the analytical techniques that can be adopted for achieving the
identification of the degradation mechanisms. Part of the presentation
will be devoted to advanced device technologies such as visible LEDs
(for lighting and automotive applications) and Blu-Ray laser diodes.
Reliability issues
of
photovoltaic devices and systems (Schedule: Monday 11.10 - 13.00)
(F. Roca and G. Graditi)
Speakers: Francesco Roca and Giorgio Graditi, ENEA Portici
Technical Unit for Solar Energy applications, Italy
Abstract:
Wafer-based
crystalline silicon solar modules are stated as very reliable
elements. This presumable high reliability is reflected by their long
power warranty periods typically in the range of 20 years or more. On
other hand PV Systems include array structure, trackers, ac and dc
wiring, overcurrent protection, disconnects, interconnects, inverters,
charge controllers, energy storage and system controllers. Reliability
issues for PV technology usually stem from someone of indicated
components. The tutorial provides an overview on the PV technology
reliability by focusing on the methodologies used for the analysis and
validation of the experimental and performance results of PV systems
operation. Furthermore, reliability issues and testing needs will also
be presented for the new class of PV technologies are arising on the
market (thin film, PV concentration and organic and hybrid approach)
showing unforeseeable reliability performances.
Hot Carrier Degradation
issues in
advanced CMOS nodes (Schedule: Monday 14.30 - 16.20)
(A. Bravaix)
Speaker: Alain Bravaix, High
Institute for Electronics and Numerics, France
Abstract: Since
the 130nm CMOS node,
Channel Hot-Carrier (CHC) degradation is coming back to the front scene
due to
new mechanisms which arise at low voltages. CHC degradation has now to
be
described through an energy mode framework instead of maximum electric
field.
The tutorial focuses on the evolution of CHC
degradation in actual
CMOS technologies between Input-Output (IO) and core devices, comparing
N-channel and P-Channel MOSFETs. Attention has been paid to show that
CHC and
Negative Bias Temperature Instability (NBTI) are closely
inter-linked. An
energy dependent modeling is developed for DC to AC transfer which
allows to
accurately describe any digital waveforms and calculate the device
lifetime and
implications for elementary cells.
Reliability issues
of current and emerging non-volatile memories (Schedule: Monday 16.40 - 18.30)
(A. S. Spinelli, C. Monzio Compagnoni, D. Ielmini)
Speaker: Alessandro Spinelli, DEI,
Polytechnic University of Milano, Italy
Abstract:
This
tutorial will cover the operation principles and the main reliability
constraints which affect the performance of current and emerging
non-volatile
memories, and is divided into three parts. In the first one,
floating-gate devices
are discussed, addressing key reliability issues such as SILC and
charge
detrapping, random telegraph noise and few-electron phenomena. In the
second
part, PCM technology and reliability are discussed as an emerging
alternative
for NVMs. In particular, the resistance change with time due to the
metastable
nature of the amorphous phase will be described, discussing the effect
of crystallization
and reversible/irreversible structure relaxation. Finally, the
principle and
reliability of nitride-based charge-trap devices are addressed,
focusing in
particular on the programming efficiency, the different charge-loss
mechanisms
and the role of the top dielectric and highlighting the need to move
toward 3D
structures.